Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle9545 -
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Category: transistorDescription: TRANSISTOR, DIGITAL, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transistor Case Styl...4450 -
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Category: transistorDescription: Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin5649
